Massive Interfacial Reconstruction at Misfit Dislocations in Metal/Oxide Interfaces
نویسندگان
چکیده
Electronic structure calculations were performed to study the role of misfit dislocations on the structure and chemistry of a metal/oxide interface. We found that a chemical imbalance exists at the misfit dislocation which leads to dramatic changes in the point defect content at the interface - stabilizing the structure requires removing as much as 50% of the metal atoms and insertion of a large number of oxygen interstitials. The exact defect composition that stabilizes the interface is sensitive to the external oxygen partial pressure. We relate the preferred defect structure at the interface to a competition between chemical and strain energies as defects are introduced.
منابع مشابه
Non-uniform Solute Segregation at Semi-Coherent Metal/Oxide Interfaces
The properties and performance of metal/oxide nanocomposites are governed by the structure and chemistry of the metal/oxide interfaces. Here we report an integrated theoretical and experimental study examining the role of interfacial structure, particularly misfit dislocations, on solute segregation at a metal/oxide interface. We find that the local oxygen environment, which varies significantl...
متن کاملCondensation of two-dimensional oxide-interfacial charges into one-dimensional electron chains by the misfit-dislocation strain field.
The success of semiconductor technology is largely ascribed to controlled impacts of strains and defects on the two-dimensional interfacial charges. Interfacial charges also appear in oxide heterojunctions such as LaAlO3/SrTiO3 and (Nd0.35Sr0.65)MnO3/SrTiO3. How the localized strain field of one-dimensional misfit dislocations, defects resulting from the intrinsic misfit strains, would affect t...
متن کاملThe peculiarity of the metal-ceramic interface
Important properties of materials are strongly influenced or controlled by the presence of solid interfaces, i.e. from the atomic arrangement in a region which is a few atomic spacing wide. Using the quantitative analysis of atom column positions enabled by CS-corrected transmission electron microscopy and theoretical calculations, atom behaviors at and adjacent to the interface was carefully e...
متن کاملInfluence of interface structure on mass transport in phase boundaries between different ionic materials
ABSTRACT Internal and external interfaces in solids exhibit completely different transport properties compared to the bulk. Transport parallel to grain or phase boundaries is usually strongly enhanced. Transport perpendicular to an interface is usually blocked, i.e., transport across an interface is often much slower. Due to the high density of interfaces in modern micro- and nanoscaled devices...
متن کاملFermi-Level Pinning by Misfit Dislocations at GaAs Interfaces
Fermi-level pinning by misfit dislocations at GaAs interfaces has been investigated. n -GaInAs was used to control the misfit dislocation density by varying of composition and epilayer thickness. interfaces with zero or low dislocation densities are Ohmic to current flow, and become rectifying with increasing dislocation density. The "Schottky barrier height" increases with dislocation density ...
متن کامل